The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using
successive ionic layer adsorption and reaction (SULAR). CuSCN films show -phase structure by virtue of X-ray
diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects
with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C2 versus voltage curve
implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and
1.5eV, respectively. The forward conduction is determined by trap-assisted space charge limited current mechanism. At
forward bias voltages, the electronic potential barrier is larger than holes in the p-CuSCN/n-Si heterojunction interface. In
this voltage area, a single carrier injuction is induced and the main current of p-CuSCN/n-Si heterojunction is hole
current. In addition, a band diagram of ZnO/CuSCN heterojunctions is also proposed to explain the transport mechanism.
This heterojunction diode can be well used to light emission devices and photovoltaic devices.