Fig. (1)
SEM images of the designed (
a
) 80 nm, (
b
) 100 nm, (
c
) 150 nm, and (
d
) 200 nm line patterns on a HSQ stamp prebaked at 120 °C for 3 min and fabricated with 280 C/cm
2
e-beam dose and 4% TMAH development for 20 s.
